MOSFET N-CH 120V 35A TO252-3 IPD35N12S3L24ATMA1
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Description:
MOSFET N-CH 120V 35A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD35N12S3L24ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory39021,Price reference "real-time change" China/Hongkong。 IPD35N12S3L24ATMA1 package/specs, Download IPD35N12S3L24ATMA1、Datasheet。