MOSFET N-CH 80V 52A/169A HSOF-8 IPT029N08N5ATMA1
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Description:
MOSFET N-CH 80V 52A/169A HSOF-8
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPT029N08N5ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory74886,Price reference "real-time change" China/Hongkong。 IPT029N08N5ATMA1 package/specs, Download IPT029N08N5ATMA1、Datasheet。