MOSFET N-CH 650V 38A TO247-3 IPW65R099C6FKSA1
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Description:
MOSFET N-CH 650V 38A TO247-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPW65R099C6FKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68625,Price reference "real-time change" China/Hongkong。 IPW65R099C6FKSA1 package/specs, Download IPW65R099C6FKSA1、Datasheet。