MOSFET 800V TDSON-8 IPLK80R900P7ATMA1
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Description:
MOSFET 800V TDSON-8
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPLK80R900P7ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26371,Price reference "real-time change" China/Hongkong。 IPLK80R900P7ATMA1 package/specs, Download IPLK80R900P7ATMA1、Datasheet。