TRENCH 40<-<100V PG-TTFN-9 IQE050N08NM5CGATMA1
The pictures are for reference only
Model:
IQE050N08NM5CGATMA1
Description:
TRENCH 40<-<100V PG-TTFN-9
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Surface mount,Wettable wings
DataSheet
IQE050N08NM5CGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory44020,Price reference "real-time change" China/Hongkong。 IQE050N08NM5CGATMA1 package/specs, Download IQE050N08NM5CGATMA1、Datasheet。