HIGH POWER_NEW IPP65R110CFD7XKSA1
The pictures are for reference only
Description:
HIGH POWER_NEW
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPP65R110CFD7XKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31024,Price reference "real-time change" China/Hongkong。 IPP65R110CFD7XKSA1 package/specs, Download IPP65R110CFD7XKSA1、Datasheet。