MOSFET N-CH 650V 5.2A SOT223 IPN65R1K5CEATMA1
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Description:
MOSFET N-CH 650V 5.2A SOT223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPN65R1K5CEATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30093,Price reference "real-time change" China/Hongkong。 IPN65R1K5CEATMA1 package/specs, Download IPN65R1K5CEATMA1、Datasheet。