MOSFET N-CH 600V 9.9A TO220 IPAN60R650CEXKSA1
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Description:
MOSFET N-CH 600V 9.9A TO220
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPAN60R650CEXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory44261,Price reference "real-time change" China/Hongkong。 IPAN60R650CEXKSA1 package/specs, Download IPAN60R650CEXKSA1、Datasheet。