MOSFET N-CH 800V 8A TO251-3 IPU80R600P7AKMA1
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Description:
MOSFET N-CH 800V 8A TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPU80R600P7AKMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory74846,Price reference "real-time change" China/Hongkong。 IPU80R600P7AKMA1 package/specs, Download IPU80R600P7AKMA1、Datasheet。