LOW POWER_LEGACY IPI50R350CPXKSA1
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Description:
LOW POWER_LEGACY
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI50R350CPXKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21694,Price reference "real-time change" China/Hongkong。 IPI50R350CPXKSA1 package/specs, Download IPI50R350CPXKSA1、Datasheet。