MOSFET N-CH 650V 20.2A TO262-3 IPI65R190C6XKSA1
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Description:
MOSFET N-CH 650V 20.2A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI65R190C6XKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory35484,Price reference "real-time change" China/Hongkong。 IPI65R190C6XKSA1 package/specs, Download IPI65R190C6XKSA1、Datasheet。