MOSFET N-CH 75V 100A TO263-3 IPB031NE7N3GATMA1
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Description:
MOSFET N-CH 75V 100A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPB031NE7N3GATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory70828,Price reference "real-time change" China/Hongkong。 IPB031NE7N3GATMA1 package/specs, Download IPB031NE7N3GATMA1、Datasheet。