MOSFET BVDSS: 61V~100V POWERDI50 DMNH10H021SPSW-13
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Description:
MOSFET BVDSS: 61V~100V POWERDI50
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
DMNH10H021SPSW-13(MOSFET)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory66589,Price reference "real-time change" China/Hongkong。 DMNH10H021SPSW-13 package/specs, Download DMNH10H021SPSW-13、Datasheet。