MOSFET N-CH 200V 88A TO262-3 IPI110N20N3GAKSA1
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Description:
MOSFET N-CH 200V 88A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Not applicable to new design
DataSheet
IPI110N20N3GAKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory37089,Price reference "real-time change" China/Hongkong。 IPI110N20N3GAKSA1 package/specs, Download IPI110N20N3GAKSA1、Datasheet。