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MOSFET P-CH 20V 4.4A 6-TSOP SI3443DVTR

SI3443DVTR image
The pictures are for reference only
Brand:
Model:
SI3443DVTR
Description:
MOSFET P-CH 20V 4.4A 6-TSOP
Stock:
9819
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    4.4A(Ta)
  • Drain source voltage (Vdss)
    20 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    -
  • FET Type
    P channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    15 nC @ 4.5 V
  • Input capacitance at different Vds (Ciss) (maximum)
    1079 pF @ 10 V
  • On resistance (maximum) for different Ids and Vgs
    65 mΩ @ 4.4A,4.5V
  • Power dissipation (maximum)
    -
  • Vgs (max)
    -
  • Vgs (th) (maximum) for different Ids
    1.5V @ 250µA
  • packing
    CT
  • series
    -
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -
  • Encapsulation/Housing
    Micro6™(TSOP-6)
  • Country of origin
    Germany
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
  • PDFicoDataSheet
    SI3443DVTR(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9819,Price reference "real-time change" China/Hongkong。 SI3443DVTR package/specs, Download SI3443DVTR、Datasheet。
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