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    Home/    Category/    MOSFET/    SI4420DY

    MOSFET N-CH 30V 12.5A 8SO SI4420DY

    SI4420DY image
    The pictures are for reference only
    Brand:
    Infineon
    Model:
    SI4420DY
    Description:
    MOSFET N-CH 30V 12.5A 8SO
    Stock:
    81918
    Type:
    goods in stock
    Store:
    Shenzhen/Hong kong
    DataSheet:
    ECAD Model:
    Offer
    Contact UsContact Us
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    产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    12.5A(Ta)
  • Drain source voltage (Vdss)
    30 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    4.5V,10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    78 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    2240 pF @ 15 V
  • On resistance (maximum) for different Ids and Vgs
    9 mΩ @ 12.5A,10V
  • Power dissipation (maximum)
    2.5W(Ta)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    1V @ 250µA
  • packing
    pipe
  • series
    HEXFET®
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 150°C(TJ)
  • Encapsulation/Housing
    8-SO
  • Country of origin
    Germany
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Surface mount
  • Part status
    stop production
    • PDFicoDataSheet
    SI4420DY（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory81918,Price reference "real-time change" China/Hongkong。 SI4420DY package/specs, Download SI4420DY、Datasheet。
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