IRLU8203PBF parameter specification DataSheet and ECAD Model -ICQQG

Home/ Category/ MOSFET/ IRLU8203PBF

The pictures are for reference only

Brand:

Infineon

Model:

IRLU8203PBF

Description:

MOSFET N-CH 30V 110A I-PAK

Stock:

20482

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：13794459602(Wechat)

Q Q：3469113929

Email：3469113929@qq.com

Parameters

Current at 25 ° C - continuous drain (Id)

110A(Tc)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

50 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

2430 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

6.8 mΩ @ 15A,10V

Power dissipation (maximum)

140W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

3V @ 250µA

packing

pipe

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

I-PAK

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

IRLU8203PBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory20482,Price reference "real-time change" China/Hongkong。 IRLU8203PBF package/specs, Download IRLU8203PBF、Datasheet。