MOSFET N-CH 60V 1.8A SOT223-4 BSP295E6327T
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Description:
MOSFET N-CH 60V 1.8A SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSP295E6327T(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory14423,Price reference "real-time change" China/Hongkong。 BSP295E6327T package/specs, Download BSP295E6327T、Datasheet。