MOSFET P-CH 60V 2.9A SOT223-4 BSP613P
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Description:
MOSFET P-CH 60V 2.9A SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSP613P(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory23008,Price reference "real-time change" China/Hongkong。 BSP613P package/specs, Download BSP613P、Datasheet。