MOSFET N-CH 30V 50A TO251-3 IPUH6N03LB G
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Description:
MOSFET N-CH 30V 50A TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPUH6N03LB G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory750,Price reference "real-time change" China/Hongkong。 IPUH6N03LB G package/specs, Download IPUH6N03LB G、Datasheet。