SPB80N03S2L-03 parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

SPB80N03S2L-03

Description:

MOSFET N-CH 30V 80A TO263-3

Stock:

30909

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

80A(Tc)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V,10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

220 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

8180 pF @ 25 V

On resistance (maximum) for different Ids and Vgs

2.8 mΩ @ 80A,10V

Power dissipation (maximum)

300W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

2V @ 250µA

packing

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-TO263-3-2

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

SPB80N03S2L-03（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory30909,Price reference "real-time change" China/Hongkong。 SPB80N03S2L-03 package/specs, Download SPB80N03S2L-03、Datasheet。