MOSFET N-CH 800V 1.8A DPAK FQD2N80TM
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Description:
MOSFET N-CH 800V 1.8A DPAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
FQD2N80TM(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94305,Price reference "real-time change" China/Hongkong。 FQD2N80TM package/specs, Download FQD2N80TM、Datasheet。