MOSFET N-CH 30V 100A TO263-3 SPB100N03S2L-03 G
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Description:
MOSFET N-CH 30V 100A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPB100N03S2L-03 G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15197,Price reference "real-time change" China/Hongkong。 SPB100N03S2L-03 G package/specs, Download SPB100N03S2L-03 G、Datasheet。