IRF7811AVTRPBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRF7811AVTRPBF

Description:

MOSFET N-CH 30V 10.8A 8SO

Stock:

73794

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

Q Q：3469113929

Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

10.8A(Ta)

Drain source voltage (Vdss)

30 V

Drive voltage (maximum RdsOn, minimum RdsOn)

4.5V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

26 nC @ 5 V

Input capacitance at different Vds (Ciss) (maximum)

1801 pF @ 10 V

On resistance (maximum) for different Ids and Vgs

14 mΩ @ 15A,4.5V

Power dissipation (maximum)

2.5W(Ta)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

3V @ 250µA

packing

TR,CT

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SO

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载IRF7811AVTRPBF.pdf

IRF7811AVTRPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory73794,Price reference "real-time change" China/Hongkong。 IRF7811AVTRPBF package/specs, Download IRF7811AVTRPBF、Datasheet。