MOSFET P-CH 60V 8.83A TO252-3 SPD08P06P
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Description:
MOSFET P-CH 60V 8.83A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPD08P06P(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory90866,Price reference "real-time change" China/Hongkong。 SPD08P06P package/specs, Download SPD08P06P、Datasheet。