MOSFET N-CH 30V 8.3A 8SO IRF7807VD1TRPBF
The pictures are for reference only
Description:
MOSFET N-CH 30V 8.3A 8SO
Contact Us
Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Schottky diode (isolated)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRF7807VD1TRPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory72773,Price reference "real-time change" China/Hongkong。 IRF7807VD1TRPBF package/specs, Download IRF7807VD1TRPBF、Datasheet。