MOSFET N-CH 100V 80A TO262-3 SPI80N10L
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Description:
MOSFET N-CH 100V 80A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPI80N10L(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory37437,Price reference "real-time change" China/Hongkong。 SPI80N10L package/specs, Download SPI80N10L、Datasheet。