MOSFET N-CH 800V 2A TO252-3 SPD02N80C3BTMA1
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Description:
MOSFET N-CH 800V 2A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPD02N80C3BTMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory33229,Price reference "real-time change" China/Hongkong。 SPD02N80C3BTMA1 package/specs, Download SPD02N80C3BTMA1、Datasheet。