MOSFET N-CH 600V 4.5A TO263-3 SPB04N60S5ATMA1
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Description:
MOSFET N-CH 600V 4.5A TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPB04N60S5ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory76732,Price reference "real-time change" China/Hongkong。 SPB04N60S5ATMA1 package/specs, Download SPB04N60S5ATMA1、Datasheet。