MOSFET N-CH 200V 660MA SOT223-4 BSP149L6327HTSA1
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Description:
MOSFET N-CH 200V 660MA SOT223-4
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSP149L6327HTSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49973,Price reference "real-time change" China/Hongkong。 BSP149L6327HTSA1 package/specs, Download BSP149L6327HTSA1、Datasheet。