MOSFET N-CH 30V 35A TO252-3 IPD105N03LGATMA1
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Description:
MOSFET N-CH 30V 35A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD105N03LGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory80684,Price reference "real-time change" China/Hongkong。 IPD105N03LGATMA1 package/specs, Download IPD105N03LGATMA1、Datasheet。