MOSFET N-CH 40V 8.9A/31A TSDSON BSZ165N04NSGATMA1
The pictures are for reference only
Description:
MOSFET N-CH 40V 8.9A/31A TSDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSZ165N04NSGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory49318,Price reference "real-time change" China/Hongkong。 BSZ165N04NSGATMA1 package/specs, Download BSZ165N04NSGATMA1、Datasheet。