MOSFET N-CH 30V 35A D2PAK IPB096N03LGATMA1
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Description:
MOSFET N-CH 30V 35A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB096N03LGATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory12631,Price reference "real-time change" China/Hongkong。 IPB096N03LGATMA1 package/specs, Download IPB096N03LGATMA1、Datasheet。