MOSFET N-CH 100V 1.8A SOT-223 STN2NE10L
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Description:
MOSFET N-CH 100V 1.8A SOT-223
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
STN2NE10L(MOSFET)BySTDesign and production, ICQQG Electronic component purchase website provides sufficient inventory99827,Price reference "real-time change" China/Hongkong。 STN2NE10L package/specs, Download STN2NE10L、Datasheet。