MOSFET N-CH 55V 30A TO252-3 IPD26N06S2L35ATMA1
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Description:
MOSFET N-CH 55V 30A TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD26N06S2L35ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory9378,Price reference "real-time change" China/Hongkong。 IPD26N06S2L35ATMA1 package/specs, Download IPD26N06S2L35ATMA1、Datasheet。