MOSFET N-CH 60V 120A TO262-3 IPI032N06N3 G
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Description:
MOSFET N-CH 60V 120A TO262-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPI032N06N3 G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory70333,Price reference "real-time change" China/Hongkong。 IPI032N06N3 G package/specs, Download IPI032N06N3 G、Datasheet。