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MOSFET N-CH 100V 100A TO262-3 IPI04CN10N G

IPI04CN10N G image
The pictures are for reference only
Brand:
Model:
IPI04CN10N G
Description:
MOSFET N-CH 100V 100A TO262-3
Stock:
93465
Type:
goods in stock
Store:
Shenzhen/Hong kong
DataSheet:
ECAD Model:
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产品参数icoParameters
  • Current at 25 ° C - continuous drain (Id)
    100A(Tc)
  • Drain source voltage (Vdss)
    100 V
  • Drive voltage (maximum RdsOn, minimum RdsOn)
    10V
  • FET Type
    N channels
  • FET function
    -
  • Gate charge (Qg) at different Vgs (maximum)
    210 nC @ 10 V
  • Input capacitance at different Vds (Ciss) (maximum)
    13800 pF @ 50 V
  • On resistance (maximum) for different Ids and Vgs
    4.2 mΩ @ 100A,10V
  • Power dissipation (maximum)
    300W(Tc)
  • Vgs (max)
    ±20V
  • Vgs (th) (maximum) for different Ids
    4V @ 250µA
  • packing
    pipe
  • series
    OptiMOS™
  • technology
    MOSFET(Metal oxide)
  • working temperature
    -55°C ~ 175°C(TJ)
  • Encapsulation/Housing
    PG-TO262-3
  • Country of origin
    Germany
  • Warehouse
    China/Hong Kong
  • quality
    Original genuine
  • Installation type
    Through-Hole
  • Part status
    stop production
  • PDFicoDataSheet
    IPI04CN10N G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93465,Price reference "real-time change" China/Hongkong。 IPI04CN10N G package/specs, Download IPI04CN10N G、Datasheet。
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