IPI04CN10N G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IPI04CN10N G

Description:

MOSFET N-CH 100V 100A TO262-3

Stock:

93465

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

Tel ：0755-82988826

Phone：+86 19166251823(Wechat)

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Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

100A(Tc)

Drain source voltage (Vdss)

100 V

Drive voltage (maximum RdsOn, minimum RdsOn)

10V

FET Type

N channels

FET function

Gate charge (Qg) at different Vgs (maximum)

210 nC @ 10 V

Input capacitance at different Vds (Ciss) (maximum)

13800 pF @ 50 V

On resistance (maximum) for different Ids and Vgs

4.2 mΩ @ 100A,10V

Power dissipation (maximum)

300W(Tc)

Vgs (max)

±20V

Vgs (th) (maximum) for different Ids

4V @ 250µA

packing

pipe

series

OptiMOS™

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

PG-TO262-3

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Through-Hole

Part status

stop production

DataSheet

IPI04CN10N G（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory93465,Price reference "real-time change" China/Hongkong。 IPI04CN10N G package/specs, Download IPI04CN10N G、Datasheet。