MOSFET N-CH 80V 50A TO251-3 IPU103N08N3 G
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Description:
MOSFET N-CH 80V 50A TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPU103N08N3 G(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory67956,Price reference "real-time change" China/Hongkong。 IPU103N08N3 G package/specs, Download IPU103N08N3 G、Datasheet。