MOSFET P-CH 30V 9.9/12.5A 8TDSON BSC200P03LSGAUMA1
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Description:
MOSFET P-CH 30V 9.9/12.5A 8TDSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
BSC200P03LSGAUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory46180,Price reference "real-time change" China/Hongkong。 BSC200P03LSGAUMA1 package/specs, Download BSC200P03LSGAUMA1、Datasheet。