IRF7707TRPBF parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Infineon

Model:

IRF7707TRPBF

Description:

MOSFET P-CH 20V 7A 8TSSOP

Stock:

53697

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Parameters

Current at 25 ° C - continuous drain (Id)

7A(Ta)

Drain source voltage (Vdss)

20 V

Drive voltage (maximum RdsOn, minimum RdsOn)

2.5V,4.5V

FET Type

P channels

FET function

Gate charge (Qg) at different Vgs (maximum)

47 nC @ 4.5 V

Input capacitance at different Vds (Ciss) (maximum)

2361 pF @ 15 V

On resistance (maximum) for different Ids and Vgs

22 mΩ @ 7A,4.5V

Power dissipation (maximum)

1.5W(Ta)

Vgs (max)

±12V

Vgs (th) (maximum) for different Ids

1.2V @ 250µA

packing

TR,CT

series

HEXFET®

technology

MOSFET(Metal oxide)

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-TSSOP

Country of origin

Germany

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

IRF7707TRPBF（MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory53697,Price reference "real-time change" China/Hongkong。 IRF7707TRPBF package/specs, Download IRF7707TRPBF、Datasheet。