MOSFET N-CH 200V 3.8A/20A PQFN IRFH5220TRPBF
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Description:
MOSFET N-CH 200V 3.8A/20A PQFN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IRFH5220TRPBF(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory94095,Price reference "real-time change" China/Hongkong。 IRFH5220TRPBF package/specs, Download IRFH5220TRPBF、Datasheet。