MOSFET P-CH TO263-3 IPB80R290C3AATMA1
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Description:
MOSFET P-CH TO263-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB80R290C3AATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory52533,Price reference "real-time change" China/Hongkong。 IPB80R290C3AATMA1 package/specs, Download IPB80R290C3AATMA1、Datasheet。