MOSFET N-CH 650V 18A D2PAK IPB65R125C7ATMA1
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Description:
MOSFET N-CH 650V 18A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB65R125C7ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory64338,Price reference "real-time change" China/Hongkong。 IPB65R125C7ATMA1 package/specs, Download IPB65R125C7ATMA1、Datasheet。