MOSFET N-CH 650V 13.8A D2PAK IPB65R280E6ATMA1
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Description:
MOSFET N-CH 650V 13.8A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPB65R280E6ATMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory7044,Price reference "real-time change" China/Hongkong。 IPB65R280E6ATMA1 package/specs, Download IPB65R280E6ATMA1、Datasheet。