MOSFET N-CH 650V 10.1A THIN-PAK IPL65R420E6AUMA1
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Description:
MOSFET N-CH 650V 10.1A THIN-PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPL65R420E6AUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory51299,Price reference "real-time change" China/Hongkong。 IPL65R420E6AUMA1 package/specs, Download IPL65R420E6AUMA1、Datasheet。