LOW POWER_LEGACY SPP03N60S5XKSA1
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Description:
LOW POWER_LEGACY
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SPP03N60S5XKSA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory68088,Price reference "real-time change" China/Hongkong。 SPP03N60S5XKSA1 package/specs, Download SPP03N60S5XKSA1、Datasheet。