MOSFET N-CH 500V 7.1A TO251-3 IPS50R520CPAKMA1
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Description:
MOSFET N-CH 500V 7.1A TO251-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPS50R520CPAKMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory76168,Price reference "real-time change" China/Hongkong。 IPS50R520CPAKMA1 package/specs, Download IPS50R520CPAKMA1、Datasheet。