MOSFET N-CH 30V 80A D2PAK FDB8132_F085
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Description:
MOSFET N-CH 30V 80A D2PAK
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
Automotive, AEC-Q101, PowerTrench®
DataSheet
FDB8132_F085(MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory38812,Price reference "real-time change" China/Hongkong。 FDB8132_F085 package/specs, Download FDB8132_F085、Datasheet。