MOSFET P-CH 60V TO252-3 IPD950P06NMSAUMA1
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Description:
MOSFET P-CH 60V TO252-3
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
IPD950P06NMSAUMA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory46520,Price reference "real-time change" China/Hongkong。 IPD950P06NMSAUMA1 package/specs, Download IPD950P06NMSAUMA1、Datasheet。