TRANSISTOR NPN SIPC10N65C3X1SA1
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Description:
TRANSISTOR NPN
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Drive voltage (maximum RdsOn, minimum RdsOn)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Power dissipation (maximum)
Vgs (th) (maximum) for different Ids
DataSheet
SIPC10N65C3X1SA1(MOSFET)ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory88631,Price reference "real-time change" China/Hongkong。 SIPC10N65C3X1SA1 package/specs, Download SIPC10N65C3X1SA1、Datasheet。